tm november 2009 FFAF60UA60DN 60 a, 600 v, ultrafast ll dual diode ?2009 fairchild semiconductor corporation FFAF60UA60DN rev. a www.fairchildsemi.com 1 FFAF60UA60DN features ? ultrafast recovery, trr < 90 ns (@ i f = 30 a) ? max forward voltage, v f = 2.2 v (@ t c = 25c) ? 600v reverse voltage and high reliability ? avalanche energy rated ? rohs compliant applications ? boost diode in pfc and switching mode power supply ? welding, ups and motor control a pplication 60 a, 600 v , ultrafast ll dual diode the FFAF60UA60DN is an ultrafast ll dual diode with low forward voltage drop and rugged uis capability. this device is intended for use as freewheeling and clamping diodes in a variety of switching power supplies and other power s witching applications . it is specially s uited for us e in switching power supplies and industrial applicationa as welder and ups application. absolute maximum ratings per leg at t c =25 o c unless otherwise noted thermal characteristics per leg at t c =25 o c unless otherwise noted package marking and ordering information symbol parameter rating unit v rrm peak repetitive reverse voltage 600 v v rwm working peak reverse voltage 600 v v r dc blocking voltage 600 v i f(av) average rectified forward current @ t c = 45 o c 30 a i fsm non-repetitive peak surge current 60hz single half-sine wave 180 a t j , t stg operating and storage temperature range -65 to +150 o c symbol parameter rating unit r jc maximum thermal resistance, junction to case 2.4 o c/w device marking device package reel size tape width quantity f60ua60dn FFAF60UA60DN to3pf - - 30 pin assignments 1. anode 2. cathode 3. anode 1 2 3
FFAF60UA60DN 60 a, 600 v, ultrafast ll dual diode www.fairchildsemi.com 2 electrical characteristics per leg at t c =25 o c unless otherwise noted symbol parameter min. typ. max. unit v f 1 i f = 30 a i f = 30 a t c = 25 o c t c = 125 o c - - - - 2.2 2.0 v i r 1 v r = 600 v v r = 600 v t c = 25 o c t c = 125 o c - - - - 100 150 a t rr i rr q rr i f = 30 a, di/dt = 200 a/s t c = 25 o c - - - - - - 90 8 360 ns a nc w avl avalan che energy ( l = 40 mh) 20 - - mj test circuit and waveforms notes: 1: pulse: test pulse width = 300 s, duty cycle = 2% ?2009 fairchild semiconductor corporation FFAF60UA60DN rev. a
FFAF60UA60DN 60 a, 600 v, ultrafast ll dual diode www.fairchildsemi.com 3 typical performance characteristics figure 1. typical forward voltage drop vs. forward current figure 2. typical reverse current vs. reverse voltage figure 3.typical junction capacitance figure 4. typical reverse recovery time vs. di/dt figure 5. typical reverse recovery current vs. di/dt figure 6. forward current derating curve 0.0 0.5 1.0 1.5 2.0 0.1 1 10 100 t c = 75 o c t c = 125 o c forward current, i f [a] forward voltage, v f [v] t c = 25 o c 100 200 300 400 500 600 0.01 0.1 1 10 t c = 125 o c t c = 25 o c t c = 75 o c reverse current , i r [ a ] reverse voltage, v r [v] 0.1 1 10 100 0 50 100 150 200 capacitances , cj [pf] typical capacitance at 0v = 205pf reverse voltage, v r [v] 100 200 300 400 0 30 60 90 120 150 t c = 125 o c i f = 30a t c = 25 o c t c = 75 o c reverse recovery time, t rr [ns] di/dt [ a/ s ] 100 200 300 400 0 3 6 9 12 t c = 75 o c i f = 30a t c = 25 o c t c = 125 o c reverse recovery current, i rr [a] di/dt [ a/ s ] 25 50 75 100 125 150 0 10 20 30 40 average forward current, i f(av) [a] case temperature, t c [ o c ] ?2009 fairchild semiconductor corporation FFAF60UA60DN rev. a
FFAF60UA60DN 60 a, 600 v, ultrafast ll dual diode www.fairchildsemi.com 4 mechanical dimensions dimensions in millimeters to-3pf ?2009 fairchild semiconductor corporation FFAF60UA60DN rev. a
www.fairchildsemi.com ?2009 fairchild semiconductor corporation FFAF60UA60DN rev. a
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